Table of Contents
The organization of this text is as follows: Chapter 1 presents a general explanation of why basic
circuit theory breaks down as the operating frequency is increased to a level where the wavelength
becomes comparable with the discrete circuit components. In Chapter 2 the transmission line theory is
developed as a way to replace the low-frequency circuit models. Because of the voltage and current
wave nature, Chapter 3 introduces the Smith Chart as a generic tool to deal with the impedance behavior
on the basis of the reflection coefficient. Chapter 4 discusses two-port networks with their flow-chart
representations and how they can be described on the basis of the so-called scattering parameters.
These network models and their scattering parameter descriptions are utilized in Chapter 5 to develop
passive RF filter configurations. Before covering active devices, Chapter 6 provides a review of some
of the key semiconductor fundamentals, followed by their circuit models representation in Chapter 7.
The impedance matching and biasing of bipolar and field effect transistors is taken up in Chapter 8 in an
effort to eliminate potentially dangerous reflections and to provide optimal power flow.
Chapter 9 focuses on a number of key high-frequency amplifier configurations and their design intricacies
ranging from low noise to high power applications. Finally, Chapter 10 introduces the reader to nonlinear
systems and their designs in oscillator and mixer circuits.
Chapter 1. Introduction
1.1 Importance of RF Design.
1.2 Dimensions and Units.
1.3 Frequency Spectrum.
1.4 RF Behavior of Passive Components.
1.4.1 High Frequency Resistors.
1.4.2 High Frequency Capacitors.
1.4.3 High Frequency Inductors.
1.5 Chip Components and circuit board considerations.
1.5.1 Chip Resistors.
1.5.2 Chip Capacitors.
1.5.3 Surface Mount Inductors.
1.6 Summary.
Chapter 2. Transmission Line Analysis
2.1 Why Transmission Line Theory?
2.2 Examples of Transmission Lines.
2.3 Equivalent Circuit Representation.
2.4 Theoretical Foundation.
2.5 Circuit Parameters for a Parallel Plate Transmission Line.
2.6 Summary of Different Line Configurations.
2.7 General Transmission Line Equation.
2.7.1 Kirchhoff Voltage and Current Law Representations.
2.7.2 Traveling Voltage and Current Waves.
2.7.3 General Impedance Definition.
2.7.4 Lossless Transmission Line Model.
2.8 Microstrip Transmission Lines.
2.9 Terminated Lossless Transmission Line.
2.9.1 Voltage Reflection Coefficient.
2.9.2 Propagation Constant and Phase Velocity.
2.9.3 Standing Waves.
2.10 Special Termination Conditions.
2.10.1 Input Impedance of Terminated Lossless Line.
2.10.2 Short Circuit Transmission Line.
2.10.3 Open circuit transmission line.
2.10.4 Quarter-Wave Transmission Line.
2.11 Sourced and Loaded Transmission Line.
2.11.1 Phasor Representation of Source.
2.11.2 Power Considerations for a Transmission Line.
2.11.3 Input Impedance Matching.
2.11.4 Return Loss and Insertion Loss.
2.12 Summary.
Chapter 3. Smith Chart
3.1 From Reflection Coefficient to Load Impedance.
3.1.1 Reflection Coefficient in Phasor Form.
3.1.2 Normalized Impedance Equation.
3.1.3 Parametric Reflection Coefficient Equation.
3.1.4 Graphical Representation.
3.2 Impedance Transformation.
3.2.1 Impedance Transformation for General Load.
3.2.2 Standing Wave Ratio.
3.2.3 Special Transformation Conditions.
3.2.4 Computer Simulations.
3.3 Admittance Transformation.
3.3.1 Parametric Admittance Equation.
3.3.2 Additional Graphical Displays.
3.4 Parallel and Series Connections.
3.4.1 Parallel Connection of R and L Elements.
3.4.2 Parallel Connection of R and C Elements.
3.4.3 Series Connection of R and L Elements.
3.4.4 Series Connection of R and C Elements.
3.4.5 Example of a T-Network.
3.5 Summary.
Chapter 5. Single- and Multi-Port Networks
4.1 Basic Definitions.
4.2 Interconnecting Networks.
4.2.1 Series Connection of Networks.
4.2.2 Parallel Connection of Networks.
4.2.3 Cascading Networks.
4.2.4 Summary of ABCD Network Representations.
4.3 Network Properties and Applications.
4.3.1 Interrelations between Parameter Sets.
4.3.2 Analysis of Microwave Amplifier.
4.4 Scattering Parameters.
4.4.1 Definition of Scattering Parameters.
4.4.2 Meaning of S-Parameters.
4.4.3 Chain Scattering Matrix.
4.4.4 Conversion between Z- and S-Parameters.
4.4.5 Signal Flow Chart Modeling.
4.4.6 Generalization of S-Parameters.
4.4.7 Practical Measurements of S-parameters.
4.5 Summary.
Chapter 5. A Brief Overview of RF Filter Design
5.1 Basic Resonator and Filter Configurations.
5.1.1 Filter Types and Parameters.
5.1.2 Low-Pass filter.
5.1.3 High-Pass Filter.
5.1.4 Bandpass and Bandstop Filters.
5.1.5 Insertion loss.
5.2 Special Filter Realizations.
5.2.1 Butterworth-type filters.
5.2.2 Chebyshev-type filters.
5.2.3 Denormalization of standard low-pass design.
5.3 Filter implementation.
5.3.1 Unit elements.
5.3.2 Kuroda’s identities.
5.3.3 Examples of Microstip Filter Design.
5.4 Coupled Filter.
5.4.1 Odd and Even Mode Excitation.
5.4.2 Band-pass Filter Section.
5.4.3 Cascading band-pass filter elements.
5.4.4 Design example.
5.5 Summary.
Chapter 6. Active RF Components
6.1 Semiconductor Basics.
6.1.1 Physical properties of semiconductors.
6.1.2 PN-Junction.
6.1.3 Schottky Contact.
6.2 RF Diodes.
6.2.1 Schottky Diode.
6.2.2 PIN Diode.
6.2.3 Varactor Diode.
6.2.4 IMPATT diode.
6.2.5 Tunnel Diode.
6.2.6 TRAPATT, BARRITT, and Gunn Diodes.
6.3 Bipolar Junction Transistor.
6.3.1 Construction.
6.3.2 Functionality.
6.3.3 Frequency response.
6.3.4 Temperature Behavior.
6.3.5 Limiting Values.
6.4 RF Field-Effect Transistors.
6.4.1 Construction.
6.4.2 Functionality.
6.4.3 Frequency Response.
6.4.4 Limiting values.
6.5 High Electron Mobility Transistors.
6.5.1 Construction.
6.5.2 Functionality.
6.5.3 Frequency Response.
6.6 Summary.
Chapter 7. Active RF Component Modeling
7.1 Diode Models.
7.1.1 Nonlinear Diode Model.
7.1.2 Linear Diode Model.
7.2 Transistor Models.
7.2.1 Large Signal BJT Models.
7.2.2 Small Signal BJT Models.
7.2.3 Large Signal FET Models.
7.2.4 Small Signal FET Models.
7.3 Measurement of Active Devices.
7.3.1 DC Characterization of Bipolar Transistor.
7.3.2 Measurements of AC Parameters of Bipolar Transistor.
7.3.3 Measurements of Field Effect Transistor Parameters.
7.4 Scattering Parameter Device Characterization.
7.5 Summary.
Chapter 8. Matching and Biasing Networks
8.1 Impedance Matching Using Discrete Components.
8.1.1 Two-Component Matching Networks.
8.1.2 Forbidden Regions, Frequency Response and Quality Factor.
8.1.3 T and Pi Matching Networks.
8.2 Microstrip Line Matching Networks.
8.2.1 From Discrete Components to Microstrip Lines.
8.2.2 Single-Stub Matching Networks.
8.2.3 Double-Stub Matching Networks.
8.3 Amplifier Classes of Operation and Biasing Networks.
8.3.1 Classes of Operation and Efficiency of Amplifiers.
8.3.2 Bipolar Transistor Biasing Networks.
8.3.3 Field Effect Transistor Biasing Networks.
8.4 Summary.
Chapter 9. RF Transistor Amplifier Designs
9.1 Characteristics of Amplifiers.
9.2 Amplifier Power Relations.
9.2.1 RF Source.
9.2.2 Transducer Power Gain.
9.2.3 Additional Power Relations.
9.3 Stability Considerations.
9.3.1 Stability Circles.
9.3.2 Unconditional Stability.
9.3.3 Stabilization Methods.
9.4 Constant Gain.
9.4.1 Unilateral Design.
9.4.2 Unilateral Figure of Merit.
9.4.3 Bilateral Design.
9.4.4 Operating and Available Power Gain Circles.
9.5 Noise Figure Circles.
9.6 Constant VSWR Circles.
9.7 Broad-Band, High Power, and Multi-Stage Amplifiers.
9.7.1 Broad-Band Amplifiers.
9.7.2 High Power Amplifiers.
9.7.3 Multi-Stage Amplifiers.
9.8 Summary.
Chapter 10. Oscillators and Mixers
10.1 Basic Oscillator Model.
10.1.1 Negative Resistance Oscillator.
10.1.2 Feedback Oscillator Design.
10.1.3 Design Steps.
10.1.4 Quartz oscillators.
10.2 High Frequency Oscillator Configuration.
10.2.1 Fixed-Frequency Oscillators.
10.2.2 Dielectric Resonator Oscillators.
10.2.3 YIG-Tuned Oscillator.
10.2.4 Voltage-Controlled Oscillator.
10.2.5 Gunn-Element Oscillator.
10.3 Basic Characteristics of Mixers.
10.3.1 Basic concepts.
10.3.2 Frequency domain considerations.
10.3.3 Single-Ended Mixer Design.
10.3.4 Single-Balanced Mixer.
10.3.5 Double-Balanced Mixer.
10.4 Summary.
Appendix A. Useful Physical Quantities and Units
Appendix B. Skin Equation for a Cylindrical Conductor
Appendix C. Complex Numbers
Appendix D. Matrix Conversions
Appendix E. Physical Parameters of Semiconductors
Appendix F. Long and Short Diode Models
Appendix G. Couplers
Appendix H. Noise Analysis
Appendix I. Introduction to MATLAB