Outline

Chapter 1: Introduction

1.1 Importance of Radio Frequency Design
1.2 Dimensions and Units
1.3 Frequency Spectrum
1.4 RF Behavior of Passive Components
1.4.1 Resistors at High Frequency
1.4.2 Capacitors at High Frequency
1.4.3 Inductors at High Frequency
1.5 Chip Components and Circuit Board Considerations
1.5.1 Chip Resistors
1.5.2 Chip Capacitors
1.5.3 Surface-Mounted Inductors
1.6 RF Circuit Manufacturing Processes
1.7 Summary

Chapter 2: Transmission Line Analysis

2.1 Why Transmission Line Theory?
2.2 Examples of Transmission Lines
2.2.1 Two-Wire Lines
2.2.2 Coaxial Line
2.2.3 Microstrip Lines
2.3 Equivalent Circuit Representation
2.4 Theoretical Foundation
2.4.1 Basic Laws
2.5 Circuit Parameters for a Parallel-Plate Transmission Line
2.6 Summary of Different Line Configurations
2.7 General Transmission Line Equation
2.7.1 Kirchhoff Voltage and Current Law Representations
2.7.2 Traveling Voltage and Current Waves
2.7.3 Characteristic Impedance
2.7.4 Lossless Transmission Line Model
2.8 Microstrip Transmission Lines
2.9 Terminated Lossless Transmission Line
2.9.1 Voltage Reflection Coefficient
2.9.2 Propagation Constant and Phase Velocity
2.9.3 Standing Waves
2.10 Special Termination Conditions
2.10.1 Input Impedance of Terminated Lossless Line
2.10.2 Short-Circuit Terminated Transmission Line
2.10.3 Open-Circuited Transmission Line
2.10.4 Quarter-Wave Transmission Line
2.11 Sourced and Loaded Transmission Line
2.11.1 Phasor Representation of Source
2.11.2 Power Considerations for a Transmission Line
2.11.3 Input Impedance Matching
2.11.4 Return Loss and Insertion Loss
2.12 Summary

Chapter 3: The Smith Chart

3.1 From Reflection Coefficient to Load Impedance
3.1.1 Reflection Coefficient in Phasor Form
3.1.2 Normalized Impedance Equation
3.1.3 Parametric Reflection Coefficient Equation
3.1.4 Graphical Representation
3.2 Impedance Transformation
3.2.1 Impedance Transformation for General Load
3.2.2 Standing Wave Ratio
3.2.3 Special Transformation Conditions
3.2.4 Computer Simulations
3.3 Admittance Transformation
3.3.1 Parametric Admittance Equation
3.3.2 Additional Graphical Displays
3.4 Parallel and Series Connections
3.4.1 Parallel Connection of R and L Elements
3.4.2 Parallel Connection of R and C Elements
3.4.3 Series Connection of R and L Elements
3.4.4 Series Connection of R and C Elements
3.4.5 Example of a T-Network
3.5 Summary

Chapter 4: Single- and Multiport Networks

4.1 Basic Definitions
4.2 Interconnecting Networks
4.2.1 Series Connection of Networks
4.2.2 Parallel Connection of Networks
4.2.3 Cascading Networks
4.2.4 Summary of ABCD Network Representations
4.3 Network Properties and Applications
4.3.1 Interrelations between Parameter Sets
4.3.2 Analysis of Microwave Amplifier
4.4 Scattering Parameters
4.4.1 Definition of Scattering Parameters
4.4.2 Meaning of S-Parameters
4.4.3 Chain Scattering Matrix
4.4.4 Conversion between Z- and S-Parameters
4.4.5 Signal Flowgraph Modeling
4.4.6 Generalization of S-Parameters
4.4.7 Practical Measurements of S-Parameters
4.5 Summary

Chapter 5: An Overview of RF Filter Design

5.1 Basic Resonator and Filter Configurations
5.1.1 Filter Types and Parameters
5.1.2 Low-Pass Filter
5.1.3 High-Pass Filter
5.1.4 Bandpass and Bandstop Filters
5.1.5 Insertion Loss
5.2 Special Filter Realizations
5.2.1 Butterworth-Type Filters
5.2.2 Chebyshev-Type Filters
5.2.3 Denormalization of Standard Low-Pass Design
5.3 Filter Implementation
5.3.1 Unit Elements
5.3.2 Kuroda's Identities
5.3.3 Examples of Microstrip Filter Design
5.4 Coupled Filter
5.4.1 Odd and Even Mode Excitation
5.4.2 Bandpass Filter Section
5.4.3 Cascading Bandpass Filter Elements
5.4.4 Design Example
5.5 Summary

Chapter 6: Active RF Components

6.1 Semiconductor Basics
6.1.1 Physical Properties of Semiconductors
6.1.2 The pn-Junction
6.1.3 Schottky Contact
6.2 RF Diodes
6.2.1 Schottky Diode
6.2.2 PIN Diode
6.2.3 Varactor Diode
6.2.4 IMPATT Diode
6.2.5 Tunnel Diode
6.2.6 TRAPATT, BARRITT, and Gunn Diodes
6.3 Bipolar-Junction Transistor
6.3.1 Construction
6.3.2 Functionality
6.3.3 Frequency Response
6.3.4 Temperature Behavior
6.3.5 Limiting Values
6.3.6 Noise Performance
6.4 RF Field Effect Transistors
6.4.1 Construction
6.4.2 Functionality
6.4.3 Frequency Response
6.4.4 Limiting Values
6.5 Metal Oxide Semiconductor Transistors
6.5.1 Construction
6.5.2 Functionality
6.6 High Electron Mobility Transistors
6.6.1 Construction
6.6.2 Functionality
6.6.3 Frequency Response
6.7 Semiconductor Technology Trends
6.8 Summary

Chapter 7: Active RF Component Modeling

7.1 Diode Models
7.1.1 Nonlinear Diode Model
7.1.2 Linear Diode Model
7.2 Transistor Models
7.2.1 Large-Signal BJT Models
7.2.2 Small-Signal BJT Models
7.2.3 Large-Signal FET Models
7.2.4 Small-Signal FET Models
7.2.5 Transistor Amplifier Topologies
7.3 Measurement of Active Devices
7.3.1 DC Characterization of Bipolar Transistor
7.3.2 Measurements of AC Parameters of Bipolar Transistors
7.3.3 Measurements of Field Effect Transistor Parameters
7.4 Scattering Parameter Device Characterization
7.5 Summary

Chapter 8: Matching and Biasing Networks

8.1 Impedance Matching Using Discrete Components
8.1.1 Two-Component Matching Networks
8.1.2 Forbidden Regions, Frequency Response, and Quality Factor
8.1.3 T and Pi Matching Networks
8.2 Microstrip Line Matching Networks
8.2.1 From Discrete Components to Microstrip Lines
8.2.2 Single-Stub Matching Networks
8.2.3 Double-Stub Matching Networks
8.3 Amplifier Classes of Operation and Biasing Networks
8.3.1 Classes of Operation and Efficiency of Amplifiers
8.3.2 Bipolar Transistor Biasing Networks
8.3.3 Field Effect Transistor Biasing Networks
8.4 Summary

Chapter 9: RF Transistor Amplifier Design

9.1 Characteristics of Amplifiers
9.2 Amplifier Power Relations
9.2.1 RF Source
9.2.2 Transducer Power Gain
9.2.3 Additional Power Relations
9.3 Stability Considerations
9.3.1 Stability Circles
9.3.2 Unconditional Stability
9.3.3 Stabilization Methods
9.4 Constant Gain
9.4.1 Unilateral Design
9.4.2 Unilateral Figure of Merit
9.4.3 Bilateral Design
9.4.4 Operating and Available Power Gain Circles
9.5 Noise Figure Circles
9.6 Constant VSWR Circles
9.7 Broadband, High-Power, and Multistage Amplifiers
9.7.1 Broadband Amplifiers
9.7.2 High-Power Amplifiers
9.7.3 Multistage Amplifiers
9.8 Summary

Chapter 10: Oscillators and Mixers

10.1 Basic Oscillator Models
10.1.1 Feedback Oscillator
10.1.2 Negative Resistance Oscillator
10.1.3 Oscillator Phase Noise
10.1.4 Feedback Oscillator Design
10.1.5 Design Steps
10.1.6 Quartz Oscillators
10.2 High-Frequency Oscillator Configuration
10.2.1 Fixed-Frequency Oscillators
10.2.2 Dielectric Resonator Oscillators
10.2.3 YIG-Tuned Oscillator
10.2.4 Voltage-Controlled Oscillator
10.2.5 Gunn Element Oscillator
10.3 Basic Characteristics of Mixers
10.3.1 Basic Concepts
10.3.2 Frequency Domain Considerations
10.3.3 Single-Ended Mixer Design
10.3.4 Single-Balanced Mixer
10.3.5 Double-Balanced Mixer
10.3.6 Integrated Active Mixers
10.3.7 Image Reject Mixer
10.4 Summary

Appendices

Appendix A: Useful Physical Quantities and Units
Appendix B: Skin Equation for a Cylindrical Conductor
Appendix C: Complex Numbers
Appendix D: Matrix Conversions
Appendix E: Physical Parameters of Semiconductors
Appendix F: Long and Short Diode Models
Appendix G: Couplers
Appendix H: Noise Analysis
Appendix I: Introduction to MATLAB